DescriptionThe 74AHC1G32GW is one of the 74AHC1G32 serries.bipolar,The 74AHC1G32GW is a high-speed Si-gate CMOS device. Features of the 74AHC1G32GW are:(1)Symmetrical output impedance; (2)High noise immunity; (3)ESD protection:HBM EIA/JESD22-A114-A,exceeds 2000 V; (4)MM EIA/JESD22-A115-A exceeds;...
74AHC1G32GW: DescriptionThe 74AHC1G32GW is one of the 74AHC1G32 serries.bipolar,The 74AHC1G32GW is a high-speed Si-gate CMOS device. Features of the 74AHC1G32GW are:(1)Symmetrical output impedance; (2)High nois...
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The 74AHC1G32GW is one of the 74AHC1G32 serries.bipolar,The 74AHC1G32GW is a high-speed Si-gate CMOS device.
Features of the 74AHC1G32GW are:(1)Symmetrical output impedance; (2)High noise immunity; (3)ESD protection:HBM EIA/JESD22-A114-A,exceeds 2000 V; (4)MM EIA/JESD22-A115-A exceeds; (5)2000 V; (6)Low power dissipation; (7)Balanced propagation delays; (8)Very small 5-pin package; (9)Output capability: standard.
The absolute maximum ratings of the 74AHC1G32GW can be summarized as:(1)DC supply voltage :-0.5 ~+7.0 V; (2)input voltage range :-0.5~ +7.0 V; (3)DC input diode current :--20 mA; (4)DC output diode current :±20 mA; (5)DC output source or sink current :±25 mA; (6)DC VCC or GND current :±75 mA; (7)storage temperature range:-65 ~+150 °C; (8)power dissipation per package : 200 mW.If you want to know more information such as the electrical characteristics, please download the datasheet in www.seekic.com or www.chinaicmart.com.