Features: ` Symmetrical output impedance` High noise immunity` ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V.` Low power dissipation` Balanced propagation delays` Very small 5 pin package` Output capability: standard` Spe...
74AHC1G14: Features: ` Symmetrical output impedance` High noise immunity` ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V.` Low power ...
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SYMBOL |
PARAMETER | CONDITIONS |
MIN. |
MAX. |
UNIT |
VCC |
supply voltage |
-0.5 |
+7.0 |
V | |
VI |
input voltage |
-0.5 |
+7.0 |
V | |
LIK |
input diode current | VI < -0.5 V; note 1 |
- |
-20 |
mA |
IOK |
output diode current | VO < -0.5 V or VO > VCC + 0.5 V; note 1 |
- |
±20 |
mA |
IO |
output source or sink current | -0.5 V < VO < VCC + 0.5 V |
- |
±25 |
mA |
ICC |
DVCC or GND current |
- |
±75 |
mA | |
Tstg |
storage temperature |
-65 |
±150 |
||
PD |
power dissipation per package | for temperature range from -40 to +125 °C; |
- |
250 |
m/W |
The 74AHC1G14is a high-speed Si-gate CMOS device.
The 74AHC1G14 provides the inverting buffer function with Schmitt-trigger action. These devices are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.