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74AHC1G09

Features: High noise immunityESD protection: HBM JESD22-A114-C exceeds 2000 V MM JESD22-A115-A exceeds 200 VLow power dissipationSpecified from -40 °C to +85 °C and from -40 °C to +125 °C.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VCC supply voltage -0.5 +7.0 ...

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SeekIC No. : 004249167 Detail

74AHC1G09: Features: High noise immunityESD protection: HBM JESD22-A114-C exceeds 2000 V MM JESD22-A115-A exceeds 200 VLow power dissipationSpecified from -40 °C to +85 °C and from -40 °C to +125 °C.PinoutSpec...

74AHC1G09 Data Sheet

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Part Number:
74AHC1G09
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

High noise immunity
ESD protection:
    HBM JESD22-A114-C exceeds 2000 V
    MM JESD22-A115-A exceeds 200 V
Low power dissipation
Specified from -40 °C to +85 °C and from -40 °C to +125 °C.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VCC supply voltage   -0.5 +7.0 V
VI input voltage   [1] -0.5 +7.0 V
VO output voltage active mode [1] -0.5 +7.0 V
high-impedance mode [1] -0.5 +7.0 V
IIK input clamping current VI < -0.5 V [1] - -20 mA
IOK output clamping current VO < -0.5 V [1] - ±20 mA
IO output current VO > -0.5 V - 25 mA
ICC quiescent supply current   - ±75 mA
IGND GND current   - ±75 mA
Tstg storage temperature   -65 +150 °C
Ptot total power dissipation Tamb = -40 °C to +125 °C [2] - 250 mW



Description

The 74AHC1G09 is a high-speed Si-gate CMOS device.

The 74AHC1G09 provides the 2-input AND function with open-drain output.

The output of the 74AHC1G09 is an open drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH level.




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