Features: High noise immunityESD protection: HBM JESD22-A114-C exceeds 2000 V MM JESD22-A115-A exceeds 200 VLow power dissipationSpecified from -40 °C to +85 °C and from -40 °C to +125 °C.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VCC supply voltage -0.5 +7.0 ...
74AHC1G09: Features: High noise immunityESD protection: HBM JESD22-A114-C exceeds 2000 V MM JESD22-A115-A exceeds 200 VLow power dissipationSpecified from -40 °C to +85 °C and from -40 °C to +125 °C.PinoutSpec...
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Symbol | Parameter | Conditions | Min | Max | Unit |
VCC | supply voltage | -0.5 | +7.0 | V | |
VI | input voltage | [1] -0.5 | +7.0 | V | |
VO | output voltage | active mode | [1] -0.5 | +7.0 | V |
high-impedance mode | [1] -0.5 | +7.0 | V | ||
IIK | input clamping current | VI < -0.5 V | [1] - | -20 | mA |
IOK | output clamping current | VO < -0.5 V | [1] - | ±20 | mA |
IO | output current | VO > -0.5 V | - | 25 | mA |
ICC | quiescent supply current | - | ±75 | mA | |
IGND | GND current | - | ±75 | mA | |
Tstg | storage temperature | -65 | +150 | °C | |
Ptot | total power dissipation | Tamb = -40 °C to +125 °C | [2] - | 250 | mW |
The 74AHC1G09 is a high-speed Si-gate CMOS device.
The 74AHC1G09 provides the 2-input AND function with open-drain output.
The output of the 74AHC1G09 is an open drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH level.