74AHC1G04 Selling Leads, Price trend, 74AHC1G04 DataSheet download, circuit diagram from SeekIC.com

Features: ` Symmetrical output impedance` High noise immunity` ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V.` Low power dissipation` Balanced propagation delays` Very small 5-pin package` Specified from -40 to +85 °C ...

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SeekIC No. : 004249163 Detail

74AHC1G04: Features: ` Symmetrical output impedance` High noise immunity` ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V.` Low pow...

74AHC1G04 Data Sheet

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Part Number:: 74AHC1G04
Supply Ability:: 5000

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Qty
1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/11/21

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Product Details

Description

Features:

` Symmetrical output impedance
` High noise immunity
` ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V.
` Low power dissipation
` Balanced propagation delays
` Very small 5-pin package
` Specified from -40 to +85 °C and -40 to +125 °C.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CC	supply voltage		-0.5	+7.0	V
V_I	input voltage		-0.5	+7.0	V
I_IK	input diode current	V_I< -0.5 V	-	±20	mA
I_OK	output diode current	V_O < -0.5 V or V_O > V_CC+ 0.5 V; note 1	-	±20	mA
I_O	output source or sink current	-0.5 V < V_O < V_CC+ 0.5 V	-	±25	mA
I_CC,I_GND	V_CC or GND current		-	±75	mA
T_stg	storage temperature		-65	+150	°C
P_D	power dissipation	T_amb = -40 to +125 °C	-	250	mW

Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

Description

The 74AHC1G04 are high-speed Si-gate CMOS devices.

The 74AHC1G04 provides the inverting buffer.

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74AHC1G04

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