Features: ` HIGH SPEED: tPD = 5.0 ns (TYP.) at VCC =5V` LOWPOWER DISSIPATION: ICC = 4 A (MAX.) at TA =25 ` COMPATIBLEWITH TTLOUTPUTS VIH =2V(MIN), VIL = 0.8V (MAX)` 50W TRANSMISSIONLINE DRIVING CAPABILITY` SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL =24mA (MIN)` BALANCED PROPAGATIONDELAYS: tPLH =tPH...
74ACT86: Features: ` HIGH SPEED: tPD = 5.0 ns (TYP.) at VCC =5V` LOWPOWER DISSIPATION: ICC = 4 A (MAX.) at TA =25 ` COMPATIBLEWITH TTLOUTPUTS VIH =2V(MIN), VIL = 0.8V (MAX)` 50W TRANSMISSIONLINE DRIVING CAPA...
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Symbol | Parameter |
Value |
Unit |
VCC | Supply Voltage |
-0.5 to +7 |
V |
VI | DC Input Voltage |
-0.5 to VCC + 0.5 |
V |
VO | DC Output Voltage |
-0.5 to VCC + 0.5 |
V |
IIK | DC Input Diode Current |
± 20 |
mA |
IOK | DC Output Diode Current |
± 20 |
mA |
IO | DC Output Current |
± 50 |
mA |
ICC or IGND | DC VCC or Ground Current |
± 200 |
mA |
Tstg | Storage Temperature |
-65 to 150 |
|
TL | Lead Temperature (10 sec) |
300 |
The 74ACT86 is an advanced high-speed CMOS QUAD EXCLUSIVE OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for ow power applications mantaining high speed operation similar to equivalent Bipolar Schottky TTL.
The internal circuit 74ACT86is composed of 3 stages including buffer output, which enables high noise immunity and stabe output.
The 74ACT86 is designed to interface directly High Speed CMOS systems with TTL, NMOS and CMOS output voltage levels.
All inputs and outputs of the 74ACT86 are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.