DescriptionThe 74AC11379 high performance CMOS devices combine very high speed and high output drive comparable to the most advanced TTL families. The feature of 74ABT2952C are as follows: (1)output capability: ±24mA; (2)edge-triggered D-type inputs; (3)positive edge-triggered clock; (4)common asy...
74AC11379: DescriptionThe 74AC11379 high performance CMOS devices combine very high speed and high output drive comparable to the most advanced TTL families. The feature of 74ABT2952C are as follows: (1)output...
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The 74AC11379 high performance CMOS devices combine very high speed and high output drive comparable to the most advanced TTL families. The feature of 74ABT2952C are as follows: (1)output capability: ±24mA; (2)edge-triggered D-type inputs; (3)positive edge-triggered clock; (4)common asynchronous enable input; (5)center-pin Vcc and ground configuration to minimize high-speed switching noise; (6)Icc category: MSI.
The absolute maximum ratings of the 74AC11379 are: (1)supply voltage: -0.5 to +7.0V; (2)input diode current: -20mA; (3)input voltage: -0.5 to VCC+0.5V; (4)output diode current: -50mA; (5)output voltage: -0.5 to VCC+0.5V; (6)output source or sink current per output pin: ±50mA; (7)Vcc current: ±200mA; (8)ground current: ±200mA; (9)storage temperature: -65 to 150; (10)power dissipation per package: 500mW; (11)power dissipation per package plastic surface mount: 400mW.
The following is about the electrical characteristics of 74AC11379: (1)high-level input voltage: 2.10V min; (2)low-level input voltage: 0.90V max; (3)high-level output voltage: 2.9V min at VI=VIL or VIH, IOH=-50A; (4)low-level output voltage: 0.1V max at VI=VIL or VIH, IOH=50A; (5)input leakage current: ±0.1A max at VI=VCC or GND; (6)quiescent supply current: 8.0A max at VI=VCC or GND, I0=0mA; (7)supply current, TTL inputs high2: 0.9mA at one input at 3.4V, other inputs at Vcc or GND.