Features: *Two 8-bit positive edge triggered registers*Live insertion/extraction permitted*Power-up 3-State*Power-up reset*Multiple VCC and GND pins minimize switching noise*3-State output buffers*74ABTH16373B incorporates bus-hold data inputs whicheliminate the need for external pull-up resistors...
74ABTH16374B: Features: *Two 8-bit positive edge triggered registers*Live insertion/extraction permitted*Power-up 3-State*Power-up reset*Multiple VCC and GND pins minimize switching noise*3-State output buffers*7...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
The 74ABTH16374B high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.
The 74ABTH16374B has two 8-bit, edge triggered registers, with each register coupled to eight 3-State output buffers. The two sections of each register are controlled independently by the clock (nCP) and Output Enable (nOE) control gates.
Each register is fully edge triggered. The state of each D input, one set-up time before the Low-to-High clock transition, is transferred to the corresponding flip-flop's Q output.
The 3-State output buffers of the 74ABTH16374B are designed to drive heavily loaded 3-State buses, MOS memories, or MOS microprocessors. Each active-Low Output Enable (nOE) controls all eight 3-State buffers for its register independent of the clock operation.
When nOE is Low, the stored data appears at the outputs for that register. When nOE is High, the outputs for that register are in the High-impedance "OFF" state, which means they will neither drive nor load the bus.
Two options are available, 74ABTH16374B which does not have the bus-hold feature and 74ABTH16374B which incorporates the bus-hold feature.