74ABTH162827A

Features:

•Multiple V_CC  and GND pins minimize switching noise
•Live insertion/extraction permitted
•3-State output buffers
•Power-up 3-State
•74ABTH162827A incorporates bus-hold data inputs which eliminate the need for external pull-up resistors to hold unused inputs
•Output capability: +64mA/-32mA
•Latch-up protection exceeds 500mA per Jedec Std 17
•ESD protection exceeds 2000 V per MIL STD 883 Method 3015 and 200 V per Machine Model


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
VCC	DC supply voltage		0.5 to +7.0	V
IIK	DC input diode current	VI < 0	18	mA
VI	DC input voltage3		1.2 to +7.0	V
IOK	DC output diode current	VO < 0	50	mA
VOUT	DC output voltage3	output in Off or High state	0.5 to +5.5	V
IOUT	DC output current	output in Low state	128	mA
		Output in High state	-64	mA
Tstg	Storage temperature range		65 to 150	°C

Description

   The 74ABTH162827A high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.

    The 74ABTH162827A 20-bit buffers provide high performance bus interface buffering for wide data/address paths or buses carrying parity. They have NOR Output Enables (nOE 1, nOE 2) for maximum control flexibility.

   The 74ABTH162827A is designed with 30
series resistance in both the pullup and pulldown output structures. This design reduces line noise in applications such as memory address drivers, clock drivers and bus receivers/transmitters.

   Two options are available, 74ABTH162827A which does not have the bus-hold feature and 74ABTH162827A which incorporates the bus-hold feature.