74ABT821PWDH

DescriptionThe 74ABT821PWDH is one member of the 74ABT821 series.The 74ABT821 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.The 74ABT821 Bus interface Register is designed to eliminate the extra packages required to buffer ex...

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SeekIC No. : 004248764 Detail

74ABT821PWDH: DescriptionThe 74ABT821PWDH is one member of the 74ABT821 series.The 74ABT821 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.T...

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Part Number:
74ABT821PWDH
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/18

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Product Details

Description



Description

The 74ABT821PWDH is one member of the 74ABT821 series.The 74ABT821 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.The 74ABT821 Bus interface Register is designed to eliminate the extra packages required to buffer existing registers and provide extra data width for wider data/address paths of buses carrying parity.

Features of the 74ABT821PWDH are:(1)high speed parallel registers with positive edge-triggered D-type flip-flops; (2)ideal where high speed, light loading, or increased fan-in are required with MOS microprocessors; (3)output capability: +64mA/32mA; (4)Latch-up protection exceeds 500mA per Jedec Std 17; (5)ESD protection exceeds 2000 V per MIL STD 883 Method 3015 and 200 V per Machine Model; (6)power-up 3-State; (7)power-up Reset.The register is fully edge triggered. The state of each D input, one set-up time before the Low-to-High clock transition is transferred to the corresponding flip-flop's Q output.The 3-State output buffers are designed to drive heavily loaded 3-State buses, MOS memories, or MOS microprocessors.

The absolute maximum ratings of the 74ABT821PWDH can be summarized as:(1)DC supply voltage:-0.5 to 7.0V;(2)DC input voltage:-1.2 to 7.0V;(3)DC output voltage:-0.5 to 5.5V;(4)DC input diode current:-18mA; (5)DC output diode current:-50mA; (6)DC output current:128mA; (7)storage temperature range:-65 to 150.Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).




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