74ABT640N

Bus Transceivers OCTAL XCVR W/DIR PIN INV 3-S

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SeekIC No. : 00418113 Detail

74ABT640N: Bus Transceivers OCTAL XCVR W/DIR PIN INV 3-S

floor Price/Ceiling Price

Part Number:
74ABT640N
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Logic Type : BiCMOS Logic Family : ABT
Number of Channels per Chip : 8 Input Level : TTL
Output Level : TTL Output Type : 3-State
High Level Output Current : - 32 mA Low Level Output Current : 64 mA
Propagation Delay Time : 4.3 ns Supply Voltage - Max : 5.5 V
Supply Voltage - Min : 4.5 V Maximum Operating Temperature : + 85 C
Package / Case : DIP-20 (SOT-146) Packaging : Tube    

Description

Number of Channels per Chip : 8
Output Type : 3-State
Packaging : Tube
Supply Voltage - Max : 5.5 V
Maximum Operating Temperature : + 85 C
Supply Voltage - Min : 4.5 V
Input Level : TTL
Output Level : TTL
Logic Family : ABT
High Level Output Current : - 32 mA
Low Level Output Current : 64 mA
Logic Type : BiCMOS
Propagation Delay Time : 4.3 ns
Package / Case : DIP-20 (SOT-146)


Description

The 74ABT640N belongs to 74ABT640 family which is high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. The control function implementation minimizes external timing requirements. The 74ABT640 device is an octal transceiver featuring inverting 3-State bus compatible outputs in both send and receive directions. The device features an Output Enable (OE) input for easy cascading and a Direction (DIR) input for direction control.

The features of 74ABT640N can be summarized as (1)octal bidirectional bus interface; (2)3-state buffers; (3)power-up 3-state; (4)live insertion/extraction permitted; (5)output capability: +64mA/±32mA; (6)latch-up protection exceeds 500mA per jedec Std 17; (7)ESD protection exceeds 2000 V per MIL STD 883 method 3015 and 200 V per machine model.

The absolute maximum ratings of 74ABT640N are (1)VCC DC supply voltage: -0.5 to +7.0 V; (2)IIK DC input diode current(VI < 0): -18mA; (3)IOK DC output diode current:-50mA; (4)VI DC input voltage3: -1.2 to +7.0V; (5)VOUT DC output voltage3(output in Off or High state): -0.5 to +5.5V(6)Tstg storage temperature range: -65 to +150 °C; (7)IOUT DC output current(output in Low state): 128 mA.(NOTES:1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under arecommended operating conditionso is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C. 3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.).




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