74ABT623N

The 74ABT623N belongs to 74ABT623 family which is high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. The 74ABT623 device is an octal transceiver featuring inverting 3-State bus compatible outputs in both send and receive directions. The 74ABT623 is designed for asynchronous two-way communication between data buses. The control function implementation of the 74ABT623N allows for maximum flexibility in timing. This device allows data transmission from the A bus to the B bus or from the B bus to the A bus, depending upon the logic levels at the Enable inputs (OEBA and OEAB). The Enable inputs can be used to disable the device so that the buses are effectively isolated.

The features of 74ABT623N can be summarized as (1)octal bidirectional bus interface; (2)3-state buffers; (3)power-up 3-state; (4)live insertion/extraction permitted; (5)output capability: +64mA/±32mA; (6)latch-up protection exceeds 500mA per jedec Std 17; (7)ESD protection exceeds 2000 V per MIL STD 883 method 3015 and 200 V per machine model.

The absolute maximum ratings of 74ABT623N are (1)VCC DC supply voltage: -0.5(MIN)/+7.0(MAX)V; (2)VI input voltage range: -1.2/+7.0 V; (3)IIK DC input diode current(VI <0): -18mA(MAX); (4)IOK DC output diode current( VO <0): -50mA; (5)VOUT DC output voltage3 (output in off or high state): -0.5 to +5.5V; (6)IOUT DC output current(output in Low state):128 mA; (7)Tstg storage temperature range: -65 to +150°C(1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under arecommended operating conditionso is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. The performance capability of a high-performance integrated circuit of the 74ABT623N in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C. 3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.)