74ABT245A

The 74ABT245A high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. The feature of 74ABT245A are as follows: (1)Octal bidirectional bus interface; (2)3-State buffers; (3)Output capability: +64mA/?2mA; (4)Latch-up protection exceeds 500mA per Jedec Std 17; (5)ESD protection exceeds 2000 V per MIL STD 833 Method 3015 and 200 V per Machine Model; (6)Power-up 3-State; (7)Live insertion/extraction permitted; (8)Inputs are disabled during 3-State mode.

The absolute maximum ratings of the 74ABT245A are: (1)DC supply voltage: 0.5 to +7.0 V; (2)DC input diode current:18 mA; (3)DC input voltage3: 1.2 to +7.0 V; (4)DC output diode current: 50 mA; (5)DC output voltage3: 0.5 to +5.5 V; (6)DC output current: 128 mA; (7)Storage temperature range: 65 to 150 °C.

The following is about the electrical characteristics of 74ABT245A: (1)Input clamp voltage: -0.9V typical and -1.2V max at VCC = 4.5V; IIK = 18mA; (2)High-level output voltage: 2.5V min and 2.9V typical at VCC = 4.5V; IOH = 3mA; VI = VIL or VIH; (3)Low-level output voltage: 0.42V typical and 0.55V max at VCC = 4.5V; IOL = 64mA; VI = VIL or VIH; (4)Input leakage current Control pins: ±0.01A typical and  ±1.0A max at VCC = 5.5V; VI = GND or 5.5V; (5)Power-off leakage current: ±5.0A typical and  ±100A max at VCC = 0.0V; VI or VO 4.5V; (6)3-State output High current: 5.0A typical and  50A max at VCC = 5.5V; VO = 2.7V; VI = VIL or VIH; (7)Output high leakage current: 5.0A typical and  50A max at VCC = 5.5V; VO = 5.5V; VI = GND or VCC; (8)Output current1: -40mA min, -100mA typical and -180mA max at VCC = 5.5V; VO = 2.5V; (9)Quiescent supply current: 50A typical and  250A max at VCC = 5.5V; Outputs High, VI = GND or VCC.