70MT060WHTAPbF

DescriptionThe 70MT060WHTAPbF is designed as one kind of half bridge IGBT MTPs (warp 2 speed IGBT) with current of 70A. Its benefits include optimized for welding, UPS and SMPS applications, lower coduction losses and switching losses, low EMI, requires less snubbing, direct mounting to heatsink...

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SeekIC No. : 004240243 Detail

70MT060WHTAPbF: DescriptionThe 70MT060WHTAPbF is designed as one kind of half bridge IGBT MTPs (warp 2 speed IGBT) with current of 70A. Its benefits include optimized for welding, UPS and SMPS applications, lower...

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Part Number:
70MT060WHTAPbF
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/2/15

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Product Details

Description



Description

The 70MT060WHTAPbF is designed as one kind of "half bridge" IGBT MTPs (warp 2 speed IGBT) with current of 70A. Its benefits include optimized for welding, UPS and SMPS applications, lower coduction losses and switching losses, low EMI, requires less snubbing, direct mounting to heatsink and PCB solderable terminals.

The 70MT060WHTAPbF has ten features. (1)NPT warp 2 speed IGBT technology with positive temperature coefficient. (2)HEXFRED antiparallel diodes with ultrasoft reverse recovery. (3)SMD thermistor (NTC). (4)Al2O3 BDC. (5)Very low stay inductance design for high speed operation. (6)UL pending. (7)Speed 60kHz to 150kHz. (8)UL approved file E78996. (9)Compliant to RoHS directive 2002/95/EC. (10)Designed and qualified for industrial level. Those are all the main features.

Some absolute maximum ratings of 70MT060WHTAPbF have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its continuous collector current would be 100A at Tc=25°C and would be 70A at Tc=78°C. (3)Its pulsed collector current would be 300A. (4)Its peak switching current would be 300A. (5)Its diode continuous forward current would be 53A. (6)Its peak diode forward current would be 200A. (7)Its gate to emitter voltage would be +/-20V. (8)Its RMS isolation voltage would be 2500V. (9)Its maximum power dissipation, IGBT would be 347W at Tc=25°C and would be 139W at Tc=100°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 70MT060WHTAPbF are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)Its gate threshold voltage would be min 3V and max 6V. (3)Its gate to emitter leakage current would be max +/-250nA. (4)Its collector to emitter leaking current would be max 0.7mA at Vge=0V, Ic=600A and would be max 10mA at Vge=0V, Ic=600A, Tj=150°C. At present we have not got so much information about this IC and we would try hard to get more information about 70MT060WHTAPbF. If you have any question or suggestion or want to know more information please contact us for details. Thank you!




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