6N60 Selling Leads, Price trend, 6N60 DataSheet download, circuit diagram from SeekIC.com

Features: `RDS(ON) = 1.5 @VGS = 10V` Ultra low gate charge (typical 20 nC )`Low reverse transfer Capacitance ( CRSS = typical 10pF )`Fast switching capability`Avalanche energy tested` Improved dv/dt capability, high ruggednessSpecifications PARAMETER SYMBOL RATINGS UNIT Drain-Sour...

See larger image

SeekIC No. : 004238767 Detail

6N60: Features: `RDS(ON) = 1.5 @VGS = 10V` Ultra low gate charge (typical 20 nC )`Low reverse transfer Capacitance ( CRSS = typical 10pF )`Fast switching capability`Avalanche energy tested` Improved dv/dt...

6N60 Data Sheet

Get Latest Price

Part Number:: 6N60
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/11/14

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Product Details

Description

Features:

`R_DS(ON) = 1.5 @V_GS = 10V
` Ultra low gate charge (typical 20 nC )
`Low reverse transfer Capacitance ( C_RSS = typical 10pF )
`Fast switching capability
`Avalanche energy tested
` Improved dv/dt capability, high ruggedness

Specifications

PARAMETER		SYMBOL	RATINGS	UNIT
Drain-Source Voltage	6N60-A	V_DSS	600	V
Drain-Source Voltage	6N60-B	V_DSS	650	V
Gate-Source Voltage		V_GSS	±30	V
Avalanche Current (Note 1)		I_AR	6.2	A
Continuous Drain Current	TC = 25°C	I_D	6.2	A
Continuous Drain Current	TC = 100°C	I_D	3.9	A
Pulsed Drain Current (Note 1)		I_DM	24.8	A
Avalanche Energy	Single Pulsed (Note 2)	E_AS	440	mJ
Avalanche Energy	Repetitive (Note 1)	E_AR	13	mJ
Power Dissipation		P_D	62.5	W
Junction Temperature		T_J	+150
Operating Temperature		T_OPR	-55 ~ +150
Storage Temperature		T_STG	-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Description

The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.

Customers Who Bought This Item Also Bought

6N60
US $$0.55 - 0.55 / Piece

Supply Ability:2Day

View details
6N60
US $$1.00 - 50.00 / Piece

Supply Ability:10000Week

View details
BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details
ARDUINO IIC/I2C 液晶模块，IGBT
US $$4.50 - 4.80 / Piece

Supply Ability:100Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

6N60

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

LED Products(5882)

Transformers(1503)

Cable Assemblies(5)

Crystals and Oscillators(858)

Line Protection, Backups(300)

Hardware, Fasteners, Accessories(2239)