6N1135

Maximum Reverse Diode Voltage : 5 V
Maximum Operating Temperature : + 100 C
Packaging : Tube
Maximum Input Diode Current : 25 mA
Maximum Power Dissipation : 100 mW
Maximum Forward Diode Voltage : 1.9 V
Minimum Operating Temperature : - 55 C
Maximum Baud Rate : 1 Mbps
Package / Case : PDIP-8
Current Transfer Ratio : 16 %


Features:

.Operating Temperature from -55 °C to +110 °C
.Isolation Test Voltage: 5300 VRMS
.TTL Compatible
.High Bit Rates: 1.0 MBd
.Bandwidth 2.0 MHz
.Open-Collector Output
.External Base Wiring Possible
.Lead-free component
.Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC




Application

.UL 1577 - File No. E52744 System Code H or J
.DIN EN 60747-5-2 (VDE0884)
.CUL - File No. E52744, equivalent to CSA bulletin 5A




Specifications

T_amb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Description

The 6N1135 and 6N1136 are 110 °C rated optocou- plers with a GaAIAs infrared emitting diode, optically coupled with an integrated photo detector which con- sists of a photo diode and a high-speed transistor in a DIP-8 plastic package.

High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 .C Rated 6N1135