6ED003L06-F

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Pinout




Description

The 6ED003L06-F has the following features including (1)insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology;(2)power supply of the high side drivers via boot strap;(3)signal interlocking of every phase to prevent cross-conduction;(4)externally programmable delay for fault clear after over current detection.

The device 6ED003L06-F is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600V. Based on the used SOI-technology there is an  excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence,no parasitic latch up may occur at all temperature and voltage conditions.The 6ED003L06-F provides additionally an antishoot through prevention capability which avoids the simultaneous on-state of two gate drivers of the same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and LO3). When two inputs of a same leg are activated, only one leg output is activated, so that the leg is kept steadily in a safe state. Please refer to the application note AN-Gatedrive-6ED003L06-1 for a detailed description. A minimum deadtime insertion of typ 380ns is also provided, in order to reduce cross-conduction of the external power switches.

The six independent drivers of 6ED003L06-F are controlled at the low-side using CMOS resp. LSTTL compatible signals,down to 3.3V logic. The device includes an under-voltage detection unit with hysterese characteristic and an over-current detection. The over-current level of 6ED003L06-F is adjusted by choosing the resistor value and the threshold level at pin ITRIP. Both error conditions (under-voltage and over-current) lead to a definite shut-down off all six switches. An error signal is provided at the FAULT open drain output pin. The blocking time after over-current can be adjusted with an RC-network at pin RCIN. The input RCIN owns an internal current source of 2.8 A. Therefore, the resistor R  is optional. The minimum output current can be given with 120mA for pull-up and 250mA for pull down. Because of system safety reasons a 380ns interlocking time has been realised.The function of input EN can optionally be extended with an over-temperature detection, using an external NTC-resistor (see Fig.1). There are parasitic diode structures between pins VCC and VBx due to the monolithic setup of the IC, but external bootstrap diodes are still mandatory.