Features: • Memory configuration of 5120 words ×8 bits× 2 (dynamic memory)• High-speed cycle ............................................. 25ns (Min.)• High-speed access ......................................... 18ns (Max.)• Output hold ........................................
66257FP: Features: • Memory configuration of 5120 words ×8 bits× 2 (dynamic memory)• High-speed cycle ............................................. 25ns (Min.)• High-speed access .............
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Symbol |
Parameter |
Conditions |
Rating |
Unit |
Vcc | Supply voltage |
A value based on GND pin |
-0.5to+7.0 |
V |
VI | Input voltage |
0.5 toVcc+0.5 |
V | |
Vo | Output voltage |
0.5 toVcc+0.5 |
V | |
Pd | Maximum power dissipation | Ta = 25°C |
660 |
mW |
Tstg | Storage temperature |
-65 to +150 |
°C |
The 66257FP is a high-speed line memory with a FIFO(First In First Out) structure of 5120-word ´ 8-bit double configuration which uses high-performance silicon gate CMOS process technology.
The 66257FP allows simultaneous output of 1-line delay data and 2-line delay data, and is most suitable for data correction over multiple lines.
The 66257FP has separate clock, enable and reset signals for write and read, and is most suitable as a buffer memory between devices with different data processing throughput.