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66099-4XX

Features: • Designed to meet or exceed MIL-PRF-19500radiation requirements• High Current Transfer Ratio - 200% typical• 1kVdc electrical input to output isolation• Base lead provided for conventional transistorbiasing• 150 V Breakdown voltageApplication• Elimina...

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66099-4XX: Features: • Designed to meet or exceed MIL-PRF-19500radiation requirements• High Current Transfer Ratio - 200% typical• 1kVdc electrical input to output isolation• Base lead ...

66099-4XX Data Sheet

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Part Number:
66099-4XX
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• Designed to meet or exceed MIL-PRF-19500radiation requirements
• High Current Transfer Ratio - 200% typical
• 1kVdc electrical input to output isolation
• Base lead provided for conventional transistorbiasing
• 150 V Breakdown voltage



Application

• Eliminate ground loops
• Level shifting
• Line receiver
• Switching power supplies
• Motor control


Specifications

Storage Temperature.......................................................................................................................-65 to +150
Operating Free-Air Temperature Range ...........................................................................................-55 to +100
Lead Solder Temperature (1/16" (1.6mm) from case for 5 seconds) ............................................................. 240
Input Diode Forward DC Current......................................................................................................................40mA
Input Power Dissipation (see Note 1)..............................................................................................................80mW
Reverse Input Voltage ..........................................................................................................................................3V
Collector-Base Voltage .....................................................................................................................................150V
Collector-Emitter Voltage ................................................................................... ..............................................150V
Emitter-Base Voltage.............................................................................................................................................6V
Continuous Collector Current ..........................................................................................................................300mA
Continuous Transistor Power Dissipation (see Note 2)...................................................................................300mW


Description

The 66099-4XX optocoupler consists of a 660 nm GaAIAs LED optically coupled to a high voltage photodiode driving a high voltage transistor mounted in a hermetic TO-5 package. This configuration has proven to be highly tolerant to bothproton and total dose radiation.




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