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6540

Features: • Fast access times: 10, 12, 15and 20ns• Fast OE# access times: 5, 6, 7 and 8ns• Single +3.3V +0.3V power supply• Fully static -- no clock or timing strobes necessary• All inputs and outputs are TTL-compatible• Three state outputs• Center power a...

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SeekIC No. : 004237376 Detail

6540: Features: • Fast access times: 10, 12, 15and 20ns• Fast OE# access times: 5, 6, 7 and 8ns• Single +3.3V +0.3V power supply• Fully static -- no clock or timing strobes necessa...

6540 Data Sheet

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Part Number:
6540
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• Fast access times: 10, 12, 15and 20ns
• Fast OE# access times: 5, 6, 7 and 8ns
• Single +3.3V +0.3V power supply
• Fully static -- no clock or timing strobes necessary
• All inputs and outputs are TTL-compatible
• Three state outputs
• Center power and ground pins for greater noise immunity
• Easy memory expansion with CE# and OE# options
• Automatic CE# power down
• High-performance, low-power consumption, CMOS triple-poly, double-metal process
• Packaged in 44-pin, 400-mil SOJ and 44-pin, 400-mil TSOP


Pinout

Connection Diagram


Specifications

Voltage on VCC Supply Relative to VSS........-0.5V to +4.6V
VIN ........................................................-0.5V to VCC+1.0V
Storage Temperature (plastic) ...................-55oC to +125o
Junction Temperature ...............................................+125o
Power Dissipation ......................................................1.0W
Short Circuit Output Current ......................................50mA
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.


Description

The 6540 is organized as a 131,072 x 16 SRAM using a four-transistor memory cell with a high performance, silicon gate, low-power CMOS process. Galvantech SRAMs are fabricated using triple-layer polysilicon, double-layer metal technology.

This 6540 offers center power and ground pins for improved performance and noise immunity. Static design eliminates the need for external clocks or timing strobes. For increased system flexibility and eliminating bus contention problems, this device offers chip enable (CE#), separate byte enable controls (BLE# and BHE#) and output enable (OE#) with this organization.

The 6540 offers a low power standby mode when chip is not selected. This allows system designers to meet low standby power requirements.




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