6519

RF Adapters - Between Series BNC TO MINI-WECO

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6519 Picture
SeekIC No. : 002332657 Detail

6519: RF Adapters - Between Series BNC TO MINI-WECO

floor Price/Ceiling Price

US $ 19.57~22.34 / Piece | Get Latest Price
Part Number:
6519
Mfg:
Pomona Electronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~50
  • 50~100
  • Unit Price
  • $22.34
  • $21.68
  • $20.59
  • $19.57
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Side 1 RF Series : BNC Side 1 Gender : Plug (Male)
Side 1 Polarity : Normal Side 2 RF Series : Mini-Weco
Side 2 Gender : Plug (Male) Side 2 Polarity : Normal
Adapter Style : Straight Contact Plating : Gold
Shell Plating : Nickel Body Material : Brass    

Description

Side 1 Body Style :
Side 2 Body Style :
Impedance :
Frequency Range :
Side 1 Polarity : Normal
Side 2 Polarity : Normal
Adapter Style : Straight
Contact Plating : Gold
Body Material : Brass
Side 1 Gender : Plug (Male)
Side 2 Gender : Plug (Male)
Side 1 RF Series : BNC
Shell Plating : Nickel
Side 2 RF Series : Mini-Weco


Features:

• Fast access times: 3.5, 3.8, and 4.0ns
• Fast clock speed: 166, 150, 133, and 117MHz
• Provide high performance 3-1-1-1 access rate
• Fast OE# access times: 3.5ns and 3.8ns
• Optimal for depth expansion (one cycle chip deselect to liminate bus contention)
• 3.3V -5% and +10% core power supply
• 2.5V or 3.3V I/O supply
• 5V tolerant inputs except I/O's
• Clamp diodes to VSSQ at all inputs and outputs
• Common data inputs and data outputs
• BYTE WRITE ENABLE and GLOBAL WRITE control
• Three chip enables for depth expansion and address ipeline
• Address, data and control registers
• Internally self-timed WRITE CYCLE
• Burst control pins (interleaved or linear burst sequence)
• Automatic power-down for portable applications
• High density, high speed packages



Pinout

  Connection Diagram


Specifications

Voltage on VCC Supply Relative to VSS..... .    -0.5V to +4.6V
VIN ...........................................................-0.5V to VCC+0.5V
Storage Temperature (plastic) ......................-55oC to +150o
Junction Temperature ..................................................+150o
Power Dissipation ..........................................................1.0W
Short Circuit Output Current ..........................................50mA
*Stresses greater than those listed uunder "Absolute Maximum atings" may cause permanent damage to the device.This is a stress ating only and functional operation of the device at these or any ther conditions above those indicated in the operational sections of his specification is not implied. Exposure to absolute maximum ating conditions for extended periods may affect reliability.




Description

The Galvantech Synchronous Burst SRAM family mploys of 6519 high-speed, low power CMOS designs using dvanced triple-layer polysilicon, double-layer metal echnology. Each memory cell consists of four transistors and wo high valued resistors.

The 6519 SRAM integrates 262,144x18 RAM cells with advanced synchronous peripheral circuitry nd a 2-bit counter for internal burst operation. All ynchronous inputs are gated by registers controlled by a ositive-edge-triggered clock input (CLK). The synchronous nputs include all addresses, all data inputs, address-pipelining hip enable (CE#), depth-expansion chip enables (CE2# and E2), burst control inputs (ADSC#, ADSP#, and ADV#), rite enables (WEL#, WEH#, and BWE#), and global write  GW#).

Asynchronous inputs of 6519 include the output enable (OE#) nd burst mode control (MODE). The data outputs (Q),enabled by OE#, are also asynchronous.

Addresses and chip of 6519 enables are registered with either ddress status processor (ADSP#) or address status controller ADSC#) input pins. Subsequent burst addresses can be nternally generated as controlled by the burst advance pin ADV#).

Address, data inputs, and write controls of 6519 are registered onchip o initiate self-timed WRITE cycle. WRITE cycles can e one to four bytes wide as controlled by the write control nputs. Individual byte write allows individual byte to be ritten. WEL# controls DQ1-DQ8 and DQP1. WEH# ontrols DQ9-DQ16 and DQP2. WEL#, and WEH# can be ctive only with BWE# being LOW. GW# being LOW causes ll bytes to be written. WRITE pass-through capability allows ritten data available at the output for the immediately next EAD cycle. This device also incorporates pipelined enable ircuit for easy depth expansion without penalizing system erformance.

The 6519 operates from a +3.3V core power upply and all outputs operate on a +2.5V supply. All inputs nd outputs are JEDEC standard JESD8-5 compatible. The evice is ideally suited for 486, PentiumTM, 680x0, and owerPCTM systems and for systems that are benefited from a ide synchronous data bus.




Parameters:

Technical/Catalog Information6519
VendorPomona Electronics
CategoryConnectors
Color-
Convert From (Adapter End)BNC Jack, Female Socket
Convert To (Adapter End)WECo, Mini
Features-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 6519
6519



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