Features: • Fast access times: 10 and 11ns
• Fast clock speed: 83 MHz
• Provide high performance 2-1-1-1 access rate
• Fast OE# access times: 5.0ns
• 3.3V -5% and +10% power supply
• Separate isolated output buffer supply compatible with 3.3V and 2.5V I/O (VCCQ): 2.375V to 3.6V
• 5V tolerant inputs except I/O's
• Clamp diodes to VSSQ at all inputs and outputs
• Common data inputs and data outputs
• BYTE WRITE ENABLE and GLOBAL WRITE control
• Three chip enables for depth expansion and address pipeline
• Address, data and control registers
• Internally self-timed WRITE CYCLE
• Burst control pins (interleaved or linear burst sequence)
• Automatic power-down for portable applications
• High density, high speed packagesDescriptionThe 6503 employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors.
The 6503 SRAM integrates 131,072x32 SRAM cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered clock input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining chip enable (CE#), depth-expansion chip enables (CE2# and CE2), burst control inputs (ADSC#, ADSP#, and ADV#), write enables (BW1#, BW2#, BW3#, BW4#,and BWE#), and global write (GW#).
Asynchronous inputs include the output enable (OE#), burst mode control (MODE), and sleep mode control (ZZ). The data outputs (Q), enabled by OE#, are also asynchronous.Addresses and chip enables are registered with either address status processor (ADSP#) or address status controller (ADSC#) input pins. Subsequent burst addresses can be internally generated as controlled by the burst advance pin (ADV#).
Address, data inputs, and write controls are registered onchip to initiate self-timed WRITE cycle. WRITE cycles can be one to four bytes wide as controlled by the write control inputs. Individual byte write allows individual byte to be written. BW1# controls DQ1-DQ8. BW2# controls DQ9-DQ16. BW3# controls DQ17-DQ24. BW4# controls DQ25-DQ32. BW1#, BW2# BW3#, and BW4# can be active only with BWE# being LOW. GW# being LOW causes all bytes to be written.
The 6503 operates from a +3.3V core power supply and all outputs operate on a +2.5V supply. All inputs and outputs are JEDEC standard JESD8-5 compatible. The device is ideally suited for 486, PentiumTM, 680x0, and PowerPCTM systems and for systems that are benefited from a wide synchronous data bus.
6503 Data Sheet
