6433

Features: - High slew rate 300 V/uS- High GBW product 175MHz- Low supply current 5mA- Fast settling 100nS to 0.1%- Low differential gain<0.1%- Low differential phase <0.1 degrees- Wide supply range 4.75V to 32V- Stable with unlimited capacitive load- SMD : 5962-8962401VPA*, PA**, HA***, VXA*...

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6433 Picture
SeekIC No. : 004237109 Detail

6433: Features: - High slew rate 300 V/uS- High GBW product 175MHz- Low supply current 5mA- Fast settling 100nS to 0.1%- Low differential gain<0.1%- Low differential phase <0.1 degrees- Wide supply ...

floor Price/Ceiling Price

Part Number:
6433
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/20

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Product Details

Description



Features:

- High slew rate                                             300 V/uS
- High GBW product                                         175MHz
- Low supply current                                             5mA
- Fast settling                                       100nS to 0.1%
- Low differential gain                                       <0.1%
- Low differential phase                         <0.1 degrees
- Wide supply range                                4.75V to 32V
- Stable with unlimited capacitive load
- SMD : 5962-8962401VPA*, PA**, HA***, VXA****, XA*****



Application

- Video amplifier
- Wide-bandwidth signal conditioning
- Radar
- Sonar



Specifications

Supply Voltage
                                                       (V+ - V-) 36V
Differential Input Voltage Range
(Note 4)
                                                        ±8V
Common-Mode Input Voltage Range
(Note 6)
                                                         (V+ - 0.7V) to (V- - 7V)
Output Short Circuit to Gnd
(Note 3)
                                                          Continuous
Power Dissipation
(Note 2)
                                                           400mW
Soldering Information
(Soldering, 10 seconds)                      260 C
Storage Temperature Range
                                                            -65 C to +150 C
Maximum Junction Temperature
                                                             150 C
Thermal Resistance
ThetaJA
CERDIP (Still Air)                                     113 C/W
(500LF/Min Air flow)                                51 C/W
CERPAK (Still Air)                                     228 C/W
(500LF/Min Air flow)                                140 C/W
CERAMIC SOIC (Still Air)                          228 C/W
(500LF/Min Air flow)                                140 C/W
ThetaJC
CERDIP                                                    21 C/W
CERPAK                                                    21 C/W
CERAMIC SOIC                                         21 C/W
Package Weight
(Typical)
CERDIP                                                      TBD
CERPAK                                                      TBD
CERAMIC SOIC                                            220mg
ESD Tolerance
(Note 4, 5)
                                                                   ±500V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply  only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.

Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower.

Note 3: Continuous short-circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150 C.

Note 4: In order to achieve optimum AC performance, the input stage was designed without protective clamps. Exceeding the maximum differential input voltage results in reverse breakdown of the base-emitter junction of one of the input transistors and probable degradation of the input parameters (especially Vio, Ios, and Noise).

Note 5: The average voltage that the weakest pin combinations (those involving Pin 2 or Pin 3) can withstand and still conform to the datasheet limits. The test circuit used consists of the human body model of 100pF in series with 1500 Ohms.

Note 6: The voltage between V+ and either input pin must not exceed 36V.




Description

The 6433 high-speed amplifier exhibits an excellent speed-power product in delivering 300 V/uS and 175 MHz GBW (stable down to gains as low as +5) with only 5 mA of supply current. Further, power savings and application convenience are possible by taking advantage of the wide dynamic range in operating supply voltage which extends all the way down to +5V.

This amplifier 6433 is built with National's VIP[TM] (Vertically Integrated PNP) process which provides fast PNP transistors that are true complements to the already fast NPN devices.

This advanced junction-isolated process 6433 delivers high speed performance without the need for complex and expensive dielectric isolation.




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