6432

Supply Voltage
                                                      (V+ - V-) 36V
Differential Input Voltage Range
(Note 3)
                                                      ±8V
Common-Mode Input Voltage Range
(Note 4)
                                                      (V+ - 0.7V) to (V- - 0.3V)
Output Short Circuit to Gnd
(Note 5)
                                                      Continuous
Power Dissipation
(Note 2)
                                                      400mW
Soldering Information
(Soldering, 10 seconds)                 260 C
Storage Temperature Range
                                                      -65 C < TA < +150 C
Maximum Junction Temperature
                                                      150 C
Thermal Resistance
ThetaJA
CERDIP (Still Air)                             113 C/W
(500LF/Min Air flow)                        51 C/W
CERAMIC SOIC (Still Air)                  228 C/W
(500LF/Min Air flow)                        140 C/W
ThetaJC
CERDIP                                            21 C/W
CERAMIC SOIC                                 21 C/W
Package Weight
(Typical)
CERDIP                                             TBD
CERAMIC SOIC                                  220mg
ESD Tolerance
(Note 6)
                                                          ±500V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.

Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower.

Note 3: The ESD protection circuitry between the inputs will begin to conduct when the differential input voltage reaches 8V.

Note 4: a) In addition, the voltage between the V+ pin and either input pin must not exceed 36V. b) When the voltage applied to an input pin is driven more than 0.3V below the negative supply pin voltage, a substrate diode begins to conduct. Current through this pin must then be kept less than 20mA to limit damage from self-heating.

Note 5: Although the output current is internally limited, continuous short-circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150 C.

Note 6: This value is the average voltage that the weakest pin combinations can withstand and still conform to the datasheet limits. The test circuit used consists of the human body model, 100pF in series with 1500 Ohms.

The 6432 high-speed amplifier exhibits an excellent speed-power product, delivering 300 V/uS and 100 MHz gain-bandwidth product (stable for gains as low as +2 or -1) with only 5mA of supply current. Further, power savings and application convenience are possible by taking advantage of the wide dynamic range in operating supply voltage which extends all the way down to +5V.

This amplifier 6432 is built with National's VIP[TM] (Vertically Integrated PNP) process which provides fast PNP transistors that are true complements to the already fast NPN devices.

This advance junction-isolated process of 6432 delivers high speed performance without the need for complex and expensive dielectric isolation.