62C1024L

Features:

* High-speed access time: 35, 70 ns
* Low active power: 450 mW (typical)
* Low standby power: 150 W (typical) CMOS standby
* Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications
* Fully static operation: no clock or refresh required
* TTL compatible inputs and outputs
* Single 5V (±10%) power supply


Specifications

Symbol	Parameter	Value	Unit
VTERM	Terminal Voltage with Respect to GND	0.5 to +7.0	V
TSTG	Storage Temperature	65 to +150	°C
PT	Power Dissipation	1.5	W
IOUT	DC Output Current (LOW)	20	mA

Description

The ISSI IS62C1024L is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

When CE1 is HIGH or CE2 is LOW (deselected), the IS62C1024L assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.

Easy memory expansion of IS62C1024L is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory.

The IS62C1024L is available in 32-pin plastic SOP and TSOP (type 1) packages.