6269

Power Dissipation
(Note 2)
                                                                   250mW
Reverse Current
                                                                   20mA
Forward Current
                                                                   100mA
Operating Temperature Range
                                                                   -55 C to 125 C
Storage Temperature Range
                                                                   -65 C to 150 C
Maximum Junction Temperature
                                                                   150 C
Lead Temperature
        (Soldering, 60 seconds)                      300 C
Thermal Resistance
ThetaJA
      Metal Can Pkg  (Still Air @ 0.5W)           292 C/W
                     (500LF/Min Air flow @ 0.5W)   147 C/W
ThetaJC
      Metal Can Pkg                                        58 C/W
ESD Tolerance
(Note 3)
                                                                    TBD
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicated conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.
 
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower.
 
Note 3: Human body model, 1.5K Ohms in series with 100pF.
 

The LM103 is a two-terminal monolithic reference diode electrically equivalent to a breakdown diode.  The device makes use of the reverse punch-through of double-diffused transistors, combined with active circuitry, to produce a breakdown characteristic which is ten times sharper than single-junction zener diodes at low voltages.  Breakdown voltages of LM103 from 3.0V to 3.9V are available; and, although the design is optimized for operation between 100uA and 1mA, LM103 is completely specified from 10uA to 10mA.  Noteworthy features of the LM103 are:
- Exceptionally sharp breakdown
- Low dynamic impedance from 10uA to 10mA
- Planar, passivated junctions for stable operation
- Low capacitance
The LM103, is useful in a wide range of circuit applications from level shifting to simple voltage regulation.  It can also be employed with operational amplifiers in producing breakpoints to generate nonlinear transfer functions.  Finally, LM103's unique characteristics recommend it as a reference element in low voltage power supplies with input voltages down to 4V.