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60CPT045

Features: • 175 °C high performance Schottky diode• Very low forward voltage drop• Extremely low reverse leakage• Optimized VF vs. IR trade off for high efficiency• Increased ruggedness for reverse avalanche capability• RBSOA available• Negligible switchin...

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60CPT045: Features: • 175 °C high performance Schottky diode• Very low forward voltage drop• Extremely low reverse leakage• Optimized VF vs. IR trade off for high efficiency• Inc...

60CPT045 Data Sheet

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Part Number:
60CPT045
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level




Application

• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems




Specifications

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg
per device		 IF(AV) 50 % duty cycle at TC = 159 °C, rectangular waveform 30
60		 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7		 IFSM 5 s sine or 3 s rect. pulse Following any rated
load condition and with
rated VRRM applied		 25000 A
10 ms sine or 6 ms rect. pulse 450 A
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 8 A, L = 4.4 mH 140 mJ
Repetitive avalanche current IAR Limited by frequency of operation and time pulse duration so
that TJ < TJ max. IAS at TJ max. as a function of time pulse
See fig. 8		 IAS at
TJ max.		 A





Description

High Performance Schottky Generation 5.0 60CPT045, 2 x 30 A




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