5STP 50Q1800

      The 5STP 50Q1800 is a kind of phase control thyristor. The following is about the features of 5STP 50Q1800. First,it uses patented free-floating silicon technology.Secondly, it has low on-state and switching losses.Thirdly,it is designed for traction, energy and industrial applications.Fourthly,it has optimum power handling capability.At last,it has interdigitated amplifying gate.
      Here you can get some information about the maximum ratings of 5STP 50Q1800. The V_DSM is 1800 V.The I_T(AV)M is 6100 A.The I_T(RMS) is 9600 A.The I_TSM is 94000 A.The V_T0 is 0.9 V.The r_T is 0.05 m .The V_DRM (V_RRM) is 1800 V at f = 50 Hz, t_p = 10ms.The V_RSM is 2000 V at t_p = 5 ms, single pulse.The Max I_DRM (Forward leakage current) is 300mA at V_DRM, T_vj = 125.The Max I_RRM (Reverse leakage current) is 300mA at V_RRM, T_vj = 125.The dV/dt_crit is 1000 V/s at Exp. to 0.67xV_DRM,Tvj = 125.The I_TAVM (Max. average on-state current) is 6100 A and the I_TRMS (Max. RMS on-state current) is 9600 A under the condition of half sine wave, T_C = 70.Under the condition that T_vj = 125,V_D = V_R = 0 V, t_p=10 ms, the I_TSM (Max. peak non-repetitive) is 94000 A and the I²t (Limiting load integral) is 41.28*10⁶ A²s.The Max V_T (On-state voltage) is 1.04 V at I_T = 3000 A,T_vj = 125.The V_T0 (Threshold voltage) is 0.9 V and the r_T (Slope resistance) is 0.05 m at I_T = 4000 - 18000 A,T_vj = 125.The Max I_H (Holding current) is 100 mA at T_vj = 25 and 75 mA at T_vj = 125°C.The Max I_L (Latching current) is 500 mA at T_vj = 25 and 350 mA T_vj = 125.