5STP 18H4200

      5STP 18H4200 is a kind of unique phase control thyristor which has four highlights: The first one is low on-state and switching losses ; The second one is that it is desighed for traction , energy and industrial applications; The third one is optimum power handing capability; The forth one is its patented free-floating silicon technology. Then, there are still some detailed informatiom about it . V_DSM is 4200 V; I_T(AV)M is 2075 A; I_T(RMS) is 3260 A; I_TSM is 32000 A; V_TO is 0.96 V; r_T is 0.285 m.
      At the same time , there are some mechanical data about 5STP 18H4200. Mounting force(F_M ) is 45 KN min , 50 KN typ and 60 KN max. Acceleration(a) is 50 m/s2 max when the device is uncalmped and is 100 m/s2 max when the device is clamed. Weight(m) is 0.9 Kg typ. Surface creepage distance (D_s) is 36 mm min. Air strike distance (D_a) is 15 mm min. Max.average on-state current (I_T(AV)M) is 2075 A under the condition of half sine wave and Tc is 70°C.RMS on-state current (T_(RMS) ) is 3260 A under the condition of half sine wave and Tc is 70°C. On-state voltage (V_T ) is 1.53 V max under the condition that IT is 2000 A and Tvj is 125°C.Threshold voltage (V_TO) is 0.96 V max under the condition that IT is 1000 A - 3000 A and Tvj is 125 °C. Slope resisitance (r_T) is 0.285 m max under the condition that Tj is 125 °C. Holding current (I_H ) is 80 mA max when the T_j is 25 °C amd is 60 mA max when the T_j is 125 °C. Latching current (I_L) is 600 mA max when the Tj is 125 °C and 200 mA max when the Tvj is 125 °C. Peak forward gate voltage is 12 V max . Peak forward gate current is 10 A max. Peak reserve gate voltage is 10 V max. Mean forward gate power is 3 W max. Gate-trigger voltage is 2.6 V max when the T_j is 25°C . Gate-trigger current is 400 mA max when the T_j is 25°C . Operating junction temperature range is 125°C max. Storage temperature range is from  -40°C to 140°C. 
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