Features: • Patented free-floating silicon technology• Low on-state and switching losses• Designed for traction, energy and industrial applications• Optimum power handling capability• Interdigitated amplifying gateSpecifications Symbol Conditions 5STP 17H520...
5STP17H5200: Features: • Patented free-floating silicon technology• Low on-state and switching losses• Designed for traction, energy and industrial applications• Optimum power handling ca...
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Symbol | Conditions |
5STP 17H5200 |
5STP 17H5000 |
5STP 17H4600 |
VDSM, VRSM VDRM, VRRM VRSM1 |
f = 5 Hz, tp = 10ms f = 50 Hz, tp = 10ms tp = 5ms, single pulse |
5200 V 4400 V 5700 V |
5000 V 4200 V 5500 V |
4600 V 4000 V 5100 V |
dV/dtcrit | Exp. to 0.67 x VDRM, Tj = 125°C |
2000 V/µs |