5SMY 12H1200

Features: SpecificationsDescription The 5SMY 12H1200 is designed as IGBT Die. 5SMY 12H1200 has three features.The first one is that it would have ultra low loss thin IGBT die.The second one is that it would be highly rugged SPT+ design.The third one is that it would have large bondable emitter are...

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SeekIC No. : 004234646 Detail

5SMY 12H1200: Features: SpecificationsDescription The 5SMY 12H1200 is designed as IGBT Die. 5SMY 12H1200 has three features.The first one is that it would have ultra low loss thin IGBT die.The second one is that ...

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Part Number:
5SMY 12H1200
Supply Ability:
5000

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  • Qty
  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/8

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Product Details

Description



Features:






Specifications






Description

      The 5SMY 12H1200 is designed as IGBT Die.
      5SMY 12H1200 has three features.The first one is that it would have ultra low loss thin IGBT die.The second one is that it would be highly rugged SPT+ design.The third one is that it would have large bondable emitter area.That are all the features.
      Some maximum rated values about 5SMY 12H1200  have been concluded into several points as follow.The first one is about its collector emitter voltage which would be max 1200V with condition of Vge= 0 V, Tvj >= 25 °C.The second one is about its DC collector current which would be max 57A.The third one is about its peak collector current which would be max 114A limited by Tvjmax.The fourth one is about its gate emitter voltage which would be min -20 and max 20 V.The fifth one is about its IGBT short circuit SOA which would be max 10 s with condition of Vcc= 900 V, Vcem <= 1200 V, Vge<= 15 V, Tvj<= 125 °C.The sixth one is about its junction temperature which would be from -40 to 150 °C.Something should be noted that maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747-9.
      Also there are some important IGBT characteristic values about 5SMY 12H1200.The first one is about its collector to emitter breakdown voltage which would be min 1200V with condition of Vge= 0 V, Ic= 1 mA, Tvj = 25 °C.The second one is about its collector to emitter saturation voltage which would be typ 1.8V with condition of Ic= 57 A, Vge= 15 V, Tvj=25°C and would be typ 2.0V with condition of Ic= 57 A, Vge= 15 V, Tvj=125°C.The third one is about its collector cut-off current which would be max 100 A with condition of Vce= 1200 V, Vge= 0 V, Tvj=25°C and would be typ 200A with condition of Vce= 1200 V, Vge= 0 V, Tvj=125°C.The fourth one is about its gate leakage current which would be min -200nA and max 200nA with condition of Vce= 0 V, Vge= ±20 V, Tvj= 125 °C.The sixth one is about its gate-emitter threshold voltage which would be min 5V and typ 6.2V and max 7V with condition of Ic= 2 mA, Vce= Vge, Tvj= 25 °C.And so on.For more information about 5SMY 12H1200 please contact us.






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