Features: SpecificationsDescription5SHZ08F6000 is a type of reverse blocking intergrated gate-commutated thyristor which has five unique features: The first one is optimized for current source inverter (CSI). The second one is fast response (tdon < 3 s, tdoff < 7 s). The third one is precise...
5SHZ08F6000: Features: SpecificationsDescription5SHZ08F6000 is a type of reverse blocking intergrated gate-commutated thyristor which has five unique features: The first one is optimized for current source inver...
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5SHZ08F6000 is a type of reverse blocking intergrated gate-commutated thyristor which has five unique features: The first one is optimized for current source inverter (CSI). The second one is fast response (tdon < 3 s, tdoff < 7 s). The third one is precise timing (tdoff < 400 ns).The forth one is direct fiber optic control. The fifth one is status feedback.The sixth one is Cosmic radiation withstand rating.The last one is very high EMI immunity.
There are some specifications about 5SHZ08F6000.VDRM is 6000 V.VRRM is 6000 A.ITGQM is 800 A.VT0 is 3.25 V.rT is 6.4 m.Mounting force (FM) is 12 kN min and 16 kN max.Surface creepage distance(DS) is 33 mm,whichever is greater.Air strike distance (Da) is 13 mm min,whichever is greater.Blocking: Repetitive peak off-state voltage(VDRM) is 6000 V.Reverse repetitive peak off-state voltage(VRRM) is 6000 V.(IDRM) Repetitive peak off-state current 50 mA (VD = VDRM).(IRRM)Reverse repetitive peak off-state current 50 mA (VR = VRRM).
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