Features: • Devices QML Qualified in Accordance with MIL-PRF-38535• Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Intersil' QM Plan• Radiation Hardened EPI-CMOS- Parametrics Guaranteed 1 x 105 RAD(Si)- Transient Upset > 1 x 108 RAD(Si)/s- ...
5962R9676601QYC: Features: • Devices QML Qualified in Accordance with MIL-PRF-38535• Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Intersil' QM Plan• Radiation...
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The HS-81C55/56RH are radiation hardened RAM and I/O chips fabricated using the Intersil radiation hardened Self- Aligned Junction Isolated (SAJI) silicon gate technology. Latch-up free operation of HS-81C55/56RH is achieved by the use of epitaxial starting material to eliminate the parasitic SCR effect seen in conventional bulk CMOS devices.
The HS-81C55/56RH is intended for use with the HS-80C85RH radiation hardened microprocessor system. The RAM portion is designed as 2048 static cells organized as 256 x 8. A maximum post irradiation access time of 500ns allows the HS-81C55/56RH to be used with the HS-80C85RH CPU without any wait states. The HS-81C55RH requires an active low chip enable while the HS-81C56RH requires an active high chip enable. These HS-81C55/56RH are designed for operation utilizing a single 5V power supply