5962G9689104QXX

* Programmable, read-only, asynchronous, radiation-hardened, 32K x 8 memory
- Supported by industry standard programmer
* 45ns and 40ns maximum address access time (-55 to +125)
*TTL compatible input and TTL/CMOS compatible output levels
*Three-state data bus
*Low operating and standby current
- Operating: 125mA maximum @25MHz
  Derating: 3mA/MHz
- Standby: 2mA maximum (post-rad)
*Radiation-hardened process and design; total dose    
irradiation testing to MIL-STD-883, Method 1019
- Total dose:  1E6 rad(Si)
-  LET_TH (0.25) ~ 100 MeV-cm²/mg
-  SEL Immune >128 MeV-cm²/mg
-  Saturated Cross Section cm² per bit, 1.0E-11
- 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion
- Memory cell LET threshold: >128 MeV-cm²/mg
*QML Q & V compliant part
- AC and DC testing at factory
*Packaging options:
- 28-lead 50-mil center flatpack (0.490 x 0.74)
- 28-lead 100-mil center DIP  (0.600 x 1.4) - contact factory
*V_DD: 5.0 volts + 10%
*Standard Microcircuit Drawing 5962-96891

  The UT28F256 amorphous silicon anti-fuse PROM is a high performance,asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256.The combination of radiation-hardness,fast access time, and low power consumption make the UT28F256 ideal for high speed systems designed for operation in radiation environments.