Features: State-of-the-Art BiCMOS DesignSignificantly Reduces ICCZ3-State True OutputsBack-to-Back Registers for StorageESD Protection Exceeds 2000 VPer MIL-STD-883C, Method 3015Package Options Include PlasticSmall-Outline Packages (DW), CeramicChip Carriers (FK) and Flatpacks (W), and Plastic and...
5962-9087001M3A: Features: State-of-the-Art BiCMOS DesignSignificantly Reduces ICCZ3-State True OutputsBack-to-Back Registers for StorageESD Protection Exceeds 2000 VPer MIL-STD-883C, Method 3015Package Options Incl...
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State-of-the-Art BiCMOS DesignSignificantly Reduces ICCZ
3-State True Outputs
Back-to-Back Registers for Storage
ESD Protection Exceeds 2000 VPer MIL-STD-883C, Method 3015
Package Options Include PlasticSmall-Outline Packages (DW), CeramicChip Carriers (FK) and Flatpacks (W), and Plastic and Ceramic 300-mil DIPs (JT, NT)
The SN54BCT543 octal transceiver contains two setsof D-type latches for temporary storage of dataflowing in either direction. Separate latch-enable(LEAB or LEBA) and output-enable (OEAB orOEBA) inputs are provided for each register topermit independent control in either direction ofdata flow.
The A-to-B enable (CEAB) input of SN54BCT543 must be low inorder to enter data from A or to output data fromB. IfCEABis low and LEAB is low, the A-to-Blatches are transparent; a subsequent low-to-hightransition of LEAB puts the A latches in the storagemode. With CEAB and OEAB both low, the 3-stateB outputs of SN54BCT543 are active and reflect the data presentat the output of the A latches. Data flow from B toA is similar but requires using the CEBA, LEBA,and OEBA inputs.
The SN54BCT543 is characterized for operationover the full military temperature range of 55to 125. The SN74BCT543 is characterized foroperation from 0 to 70.