Features: • Very low standby current• CMOS compatible input• Improved electromagnetic compatibility (EMC)• Fast demagnetization of inductive loads• Stable behaviour at undervoltage• Wide operating voltage range• Logic ground independent from load groundApp...
5215L: Features: • Very low standby current• CMOS compatible input• Improved electromagnetic compatibility (EMC)• Fast demagnetization of inductive loads• Stable behaviour at ...
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Headers & Wire Housings 2CKT MINI WIRE TRAP MINI WIRE TRAP CONN
• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads in industrial applications
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Parameter | Symbol | Values | Unit |
Supply voltage (overvoltage protection see page 5) | Vbb | 43 | V |
Supply voltage for full short circuit protection Tj,start = -40 ...+150 |
Vbb | 36 | V |
Load current (Short-circuit current, see page 6) | IL | self-limited | A |
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI2) = 2 , td = 400 ms; IN = low or high, each channel loaded with RL = 13.5 , |
VLoad dump3) | 60 | V |
Junction temperature Operating temperature range Storage temperature range |
Tj Ta Tstg |
+150 -30 ...+85 -40 +105 |
|
Power dissipation (DC)4) Ta = 25: (all channels active) Ta = 85: |
Ptot | 3.1 1.6 |
W |
Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150°C4), see diagrams on page 9 IL = 3.5 A, EAS = 178 mJ, 0 one channel: IL = 7.0 A, EAS = 337 mJ, 0 two parallel channels: |
ZL | 21.3 10 |
mH |
Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5k; C=100pF |
VESD | 1.0 4.0 8.0 |
kV |
Input voltage (DC) see internal circuit diagram page 8 Current through input pin (DC) Pulsed current through input pin5) Current through status pin (DC) |
VIN IIN IINp IST |
-10 ... +16 ±0.3 ±5.0 ±5.0 |
V mA |
1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended.
2) RI = internal resistance of the load dump test pulse generator
3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. See page 13
5) only for testing
• N channel vertical power MOSFET 5215L with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
• Providing embedded protective functions