Features: • 1 048 576 words by 4-bit organization• 0 to 70 operating temperature• Hyper Page Mode - EDO• Performance:• Single + 5 V (± 10 %) supply• Low power dissipation max. 660 mW active (-50 version) max. 605 mW active (-60 version) max. 550 mW active (-70 ...
514405BJ: Features: • 1 048 576 words by 4-bit organization• 0 to 70 operating temperature• Hyper Page Mode - EDO• Performance:• Single + 5 V (± 10 %) supply• Low power di...
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FFC / FPC Connectors 0.5 FPC ZIF Hsg Assy Assy 7Ckt EmbsTp Pkg
Operating temperature range | 0 to + 70 |
Storage temperature range | 55 to + 150 |
Input/output voltage | 1 to 7 V |
Power supply voltage | 1 to + 7 V |
Data out current (short circuit) | 50 mA |
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
The HYB 514405BJ is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 514405BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB 514405BJ to be packed in a standard plastic P-SOJ-26/20 package. This package size provides high system bit densities and is compatible with commonly used automatic testing and insertion equipment. System oriented feature include single + 5 V (± 10 %) power supply, direct interfacing with high performance logic device families.