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4 3 C T Q . . .

Features: ·175° C TJ operation·Center tap configuration·Low forward voltage drop·High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance·High frequency operation·Guard ring for enhanced ruggedness and long term reliabilitySpecifications Par...

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SeekIC No. : 004230176 Detail

4 3 C T Q . . .: Features: ·175° C TJ operation·Center tap configuration·Low forward voltage drop·High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance·High frequ...

4 3 C T Q . . . Data Sheet

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Part Number:
4 3 C T Q . . .
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

·175° C TJ operation
·Center tap configuration
·Low forward voltage drop
·High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
·High frequency operation
·Guard ring for enhanced ruggedness and long term reliability


Specifications

Parameters
43CTQ..L
Units
Conditions
IF(AV) Max. Average Forward Current
* See Fig. 5
20
40
A
 50% duty cycle @ TC =135°C, rectangular wave form
IFSM Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 7
850
A
 5s Sine or 3s Rect. pulse Following any rated
load condition and
with rated VRRM applied
275
 10ms Sine or 6ms Rect. pulse
EAS Non-Repetitive Avalanche Energy
(Per Leg)
7.50
mJ

TJ = 25 °C, IAS =0.50Amps, L =60mH

IAR Repetitive Avalanche Current
(Per Leg)
0.50
A
 Current decaying linearly to zero in 1 sec
Frequency limited by TJ max. VA = 1.5 x VR typical



Description

This 4 3 C T Q . . .  center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175°C junction temperature. Typical applications of the 4 3 C T Q . . .  are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.




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