Current Transfer Ratio
:
Packaging
:
Minimum Operating Temperature
: - 55 C
Maximum Forward Diode Voltage
: 1.5 V
Maximum Collector Emitter Saturation Voltage
: 0.3 V
Maximum Collector Current
: 50 mA
Maximum Power Dissipation
: 300 mW
Maximum Operating Temperature
: + 125 C
Input Type
: DC
Maximum Collector Emitter Voltage
: 40 V
Isolation Voltage
: 1000 Vrms
Package / Case
: TO-78
Features: * High Reliability
* Base lead provided for conventional transistor biasing
* Rugged package
* High gain, high voltage transistor
* +1kV electrical isolation Application* Eliminate ground loops
* Level shifting
* Line receiver
* Switching power supplies
* Motor control SpecificationsInput to Output Voltage...............................................................................................1kV
Emitter-Collector Voltage...............................................................................................7V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero)............................40V
Collector-Base Voltage..................................................................................................45V
Reverse Input Voltage ...................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)..........40mA
Peak Forward Input Current (Value applies for tw < 1s, PRR < 300 pps)......................1A
Continuous Collector Current......................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2)........300mW
Storage Temperature..............................................................................-65°C to +125°C
Operating Free-Air Temperature Range...................................................-55°C to +125°C
Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds)......................240°C Description Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor 4N48 packaged in a hermetically sealed TO-5 metal can. The 4N47, 4N48 and 4N49's can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANTX, JANTXV and JANS quality levels.
4N48 Data Sheet
