4N47

Input Type :
Maximum Collector Emitter Voltage :
Maximum Collector Emitter Saturation Voltage :
Isolation Voltage :
Current Transfer Ratio :
Maximum Forward Diode Voltage :
Maximum Collector Current :
Maximum Power Dissipation :
Maximum Operating Temperature :
Minimum Operating Temperature :
Package / Case :
Packaging :


Features:

*  High Reliability
*  Base lead provided for conventional transistor biasing
*  Rugged package
*  High gain, high voltage transistor 
*  +1kV electrical isolation


Application

*  Eliminate ground loops 
*  Level shifting
*  Line receiver
*  Switching power supplies
*  Motor control


Specifications

Input to Output Voltage...............................................................................................1kV
Emitter-Collector Voltage...............................................................................................7V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero)............................40V
Collector-Base Voltage..................................................................................................45V
Reverse Input Voltage ...................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)..........40mA
Peak Forward Input Current (Value applies for tw < 1s, PRR < 300 pps)......................1A
Continuous Collector Current......................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2)........300mW
Storage Temperature..............................................................................-65°C to +125°C
Operating Free-Air Temperature Range...................................................-55°C to +125°C
Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds)......................240°C


Description

  Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor 4N47 packaged in a hermetically  sealed TO-5 metal can. The 4N47, 4N48 and 4N49's can be tested to customer specifications, as well as to MIL-PRF-19500  JAN, JANTX, JANTXV and JANS quality levels.