Features: • 4N2X series: 4N25, 4N26, 4N27, 4N28• 4N3X series: 4N35, 4N36, 4N37, 4N38• H11AX series: H11A1, H11A2, H11A3, H11A4, H11A5• High isolation voltage between input and output (Viso=5000 V rms)• Creepage distance >7.6mm• Operating temperature up to +11...
4N3X: Features: • 4N2X series: 4N25, 4N26, 4N27, 4N28• 4N3X series: 4N35, 4N36, 4N37, 4N38• H11AX series: H11A1, H11A2, H11A3, H11A4, H11A5• High isolation voltage between input an...
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Parameter |
Symbol |
Rating |
Unit | |
Input | Forward current |
IF |
50 |
mA |
Peak forward current (t = 10s) |
IFM |
1 |
V | |
Reverse voltage |
VR |
6 |
V | |
Power dissipation (TA = 25) Derating factor (above 100) |
PD |
70 |
mW | |
3.8 |
mW/ | |||
Output | Collector-Emitter voltage |
VCEO |
80 |
V |
Collector-Base voltage |
VCBO |
80 |
V | |
Emitter-Collector voltage |
VECO |
7 |
V | |
Emitter-Base voltage |
VEBO |
7 |
mA | |
Power dissipation (TA = 25) Derating factor (above 100) |
PC |
150 |
mW | |
9.0 |
mW/ | |||
Total power dissipation |
Ptot |
200 |
mW | |
Isolation voltage *1 |
Viso |
5000 |
Vrms | |
Operating temperature |
Topr |
-55~+110 |
||
Storage temperature |
Tstg |
-55~+125 |
||
Soldering temperature *2 |
Tsol |
260 |
The 4N2X, 4N3X, H11AX series contains an infrared emitting diode optically coupled to a phototransistor. 4N3X is packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.