4N35M

Current Transfer Ratio :
Maximum Collector Current :
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Maximum Operating Temperature : + 100 C
Maximum Collector Emitter Saturation Voltage : 0.3 V
Maximum Power Dissipation : 250 mW
Packaging : Bulk
Input Type : DC
Maximum Collector Emitter Voltage : 30 V
Isolation Voltage : 5300 Vrms
Package / Case : PDIP-6


Description

The 4N35M is designed as one kind of general purpose 6-pin phototransistor optocoupler device that can be used in (1)power supply regulators; (2)digital logic inputs; (3)microprocessor inputs applications. And this 4N35M consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.

The absolute maximum ratings of the 4N35M can be summarized as:(1)Storage Temperature: -55 to +150 °C;(2)Operating Temperature: -55 to +100 °C;(3)Wave solder temperature: 260 for 10 sec °C;(4)Total Device Power Dissipation @ TA=25°C: 250 mW;(5)Derate above 25°C: 2.94 mW;(6)DC/Average Forward Input Current: 60 mA;(7)Reverse Input Voltage: 6 V;(8)Forward Current - Peak (300s, 2% Duty Cycle): 3 A;(9)LED Power Dissipation @ TA=25°C: 120 mW;(10)Derate above 25°C: 1.41 mW/°C. If you want to know more information about the 4N35M, please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	4N35M
Vendor	Lite-On Inc
Category	Isolators
Isolation Voltage	3550Vrms
Input Type	DC
Output Type	Transistor with Base
Current - Output/Channel	100mA
Voltage - Output	30V
Vce Saturation (Max)	300mV
Current Transfer Ratio (Min)	100% @ 10mA
Mounting Type	Through Hole
Package / Case	6-DIP
Packaging	Tube
Number of Circuits	1 - Single
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	4N35M 4N35M 4N35MLT ND 4N35MLTND 4N35MLT