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4N35G

Features: *BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402*FIMKO (SETI): EN 60950, Certificate number 12399*Underwriters Laboratory (UL) 1577 recognized,file number E-76222*VDE 0884, Certificate number 94778VDE 0884 related features: *Rated impulse v...

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SeekIC No. : 004231833 Detail

4N35G: Features: *BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402*FIMKO (SETI): EN 60950, Certificate number 12399*Underwriters Laboratory (UL) 1577 recogniz...

4N35G Data Sheet

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Part Number:
4N35G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

*BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402
*FIMKO (SETI): EN 60950, Certificate number 12399
*Underwriters Laboratory (UL) 1577 recognized,file number E-76222
*VDE 0884, Certificate number 94778
VDE 0884 related features:
*Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak
*Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
*Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)
*Rated recurring peak voltage (repetitive) VIORM  = 600 VRMS
*Creepage current resistance according to VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
*Thickness through insulation 0.75 mm
General features:
*Isolation materials according to UL94-VO
*Pollution degree 2 (DIN/VDE 0110 part 1 resp. IEC 664)
*Climatic classification 55/100/21 (IEC 68 part 1)
*Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection
*Low temperature coefficient of CTR
*Coupling System A




Application

Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
      For appl. class I IV at mains voltage 300 V
      For appl. class I III at mains voltage 600 V according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver,computer peripheral interface, microprocessor system interface.


Specifications

Parameter Test Conditions Symbol Value Unit
Reverse voltage   VR 5 V
Forward current   IF 60 mA
Forward surge current tp 10s IFSM 3 A
Power dissipation Tamb 25°C PV 100 mW
Junction temperature   Tj 125 °C



Description

  The 4N35G consists of a photo-transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

  The elements of 4N35G are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.




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