4N32-X000

Current Transfer Ratio :
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Packaging : Tube
Maximum Operating Temperature : + 100 C
Maximum Power Dissipation : 250 mW
Input Type : DC
Maximum Collector Current : 150 mA
Maximum Collector Emitter Voltage : 30 V
Isolation Voltage : 5300 Vrms
Maximum Collector Emitter Saturation Voltage : 1 V
Package / Case : PDIP-6


Description

Optocoupler 4N32-X000, Photodarlington Output, High Gain, with Base Connection

The 4N32-X000 has many features. Here show them to you. The first feature is very high current transfer ratio, which is 500 % minimum. The second feature of 4N32-X000 is high isolation resistance, which is 1011 typically. The third feature is standard plastic DIP package. The fourth feature is lead (Pb)-free component. The fifth feature of 4N32-X000 is component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.
The 4N32-X000 are optically coupled isolators with a gallium arsenide infrared LED and a solicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers 4N32-X000 can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields.
The 4N32-X000 has three agency approvals. The first agency approval is UL1577, and file no. E52744 system code H or J, double protection. The second agency approval is UL1577, file no. E52744 system code H or J, double protectionThe third agency approval is BSI IEC 60950 and IEC 60065.
The 4N32-X000 has many absolute maximum ratings. The first absolute maximum rating is reverse voltage, which is 3.0 V. The second absolute maximum rating is forward current, which is 60 mA. The third absolute maximum rating of 4N32-X000 is power dissipation, which is 100 mW. The fourth absolute maximum rating is derate linearly, which is 1.33 mW/°C. The fifth absolute maximum rating is collector emitter breakdown voltage, which is 30 V. The sixth absolute maximum rating is emitter base breakdown voltage, which is 8.0 V. The seventh absolute maximum rating is collector base breakdown voltage, which is 50 V. The eighth absolute maximum rating of 4N32-X000 is emitter collector breakdown voltage, which is 5.0 V. The ninth absolute maximum rating is collector current, which is 125 mA. The tenth absolute maximum rating is power dissipation, which is 150 mW. The eleventh absolute maximum rating of 4N32-X000 is derate linearly, which is 2.0 mW/°C.
There are also some notes about 4N32-X000. The first note is that Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the 4N32-X000. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. The second note of 4N32-X000 is that refering to wave profile for soldering conditions for through hole devices.