4N29

Input Type :
Isolation Voltage : 5000 Vrms
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Packaging : Tube
Maximum Operating Temperature : + 100 C
Maximum Power Dissipation : 200 mW
Maximum Collector Emitter Saturation Voltage : 1 V
Maximum Collector Emitter Voltage : 55 V
Current Transfer Ratio : 100 %
Package / Case : DIP-6
Maximum Collector Current : 100 nA


Features:

* High sensitivity to low input drive current
* Meets or exceeds all JEDEC Registered Specifications
*VDE 0884 approval available as a test option-add option .300. (e.g., 4N29.300)




Application

* Low power logic circuits
* Telecommunications equipment
* Portable electronics
* Solid state relays
*Interfacing coupling systems of different potentials and impedances.




Pinout






Specifications

ABSOLUTE MAXIMUM RATINGS (TA = 25 Unless otherwise specified.)
Parameter	Symbol	Value	Units
TOTAL DEVICE Storage Temperature	TSTG	-55 to +150
Operating Temperature	TOPR	-55 to +100
Lead Solder Temperature	TSOL	260 for 10 sec
Total Device Power Dissipation @ TA= 25 Derate above 25	PD	250 3.3	mW mW/
EMITTER Continuous Forward Current	IF	80	mA
Reverse Voltage	VR	3	V
Forward Current - Peak (300s, 2% Duty Cycle)	1F(pk)	3.0	A
LED Power Dissipation @ TA = 25	PD	150	mW
Derate above 25		2.0	mW/
DETECTOR Collector-Emitter Breakdown Voltage	BVCEO	30	V
Collector-Base Breakdown Voltage	BVCBO	30	V
Emitter-Collector Breakdown Voltage	BVECO	5	V
Detector Power Dissipation @ TA = 25	PD	150 2.0	mW mW/
Derate above 25
Continuous Collector Current	IC	150	mA

Description

The 4N29,4N30,4N31,4N32,4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.