4N25V

Isolation Voltage : 5000 Vrms
Minimum Operating Temperature : - 55 C
Packaging : Tube
Maximum Operating Temperature : + 100 C
Maximum Collector Emitter Voltage : 32 V
Maximum Collector Emitter Saturation Voltage : 0.3 V
Maximum Collector Current : 50 mA
Maximum Power Dissipation : 250 mW
Input Type : DC
Maximum Forward Diode Voltage : 1.4 V
Package / Case : PDIP-6
Current Transfer Ratio : 100 %


Features:

*BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402
*FIMKO (SETI): EN 60950, Certificate number 12399
*Underwriters Laboratory (UL) 1577 recognized,file number E-76222
*VDE 0884, Certificate number 94778
VDE 0884 related features:
*Rated impulse voltage (transient overvoltage) V_IOTM = 6 kV peak
*Isolation test voltage (partial discharge test voltage) V_pd = 1.6 kV
*Rated isolation voltage (RMS includes DC) V_IOWM = 600 V_RMS (848 V peak)
*Rated recurring peak voltage (repetitive) V_IORM= 600 V_RMS
*Creepage current resistance according to VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
*Thickness through insulation 0.75 mm
General features:
*Isolation materials according to UL94-VO
*Pollution degree 2 (DIN/VDE 0110 part 1 resp. IEC 664)
*Climatic classification 55/100/21 (IEC 68 part 1)
*Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection
*Low temperature coefficient of CTR
*Coupling System A

Application

Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
For appl. class I IV at mains voltage 300 V
For appl. class I III at mains voltage 600 V according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver,computer peripheral interface, microprocessor system interface.




Specifications

Parameter	Test Conditions	Symbol	Value	Unit
Reverse voltage		VR	5	V
Forward current		IF	60	mA
Forward surge current	tp 10s	IFSM	3	A
Power dissipation	Tamb 25°C	PV	100	mW
Junction temperature		Tj	125	°C

Description

Optocoupler 4N25V , Phototransistor Output

The 4N25V consists of a photo-transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

The elements of 4N25V are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.