4N23A

Input Type :
Maximum Collector Emitter Voltage :
Maximum Collector Emitter Saturation Voltage :
Isolation Voltage :
Current Transfer Ratio :
Maximum Forward Diode Voltage :
Maximum Collector Current :
Maximum Power Dissipation :
Maximum Operating Temperature :
Minimum Operating Temperature :
Package / Case :
Packaging : Box


Features:

* Collector is electrically isolated from the case.
* Overall current gain...1.5 typical (4N24A)
* Base lead provided for conventional transistor biasing
* Rugged package
* High gain, high voltage transistor
* +1kV electrical isolation
 


Application

*  Eliminate ground loops
* Level shifting
* Line receiver
*  Switching power supplies
* Motor control


Specifications

Input to Output Voltage..............................................................................................±1kV
Emitter-Collector Voltage.................................................................................................4V
Collector-Emitter Voltage...............................................................................................35V
Collector-Base Voltage...................................................................................................35V
Reverse Input Voltage ....................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)....40mA
Peak Forward Input Current (Value applies for tw 1s, PRR < 300 pps).....................1A
Continuous Collector Current.....................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2)...300mW
Storage Temperature.............................................................................-65°C to +125°C
Operating Free-Air Temperature Range.................................................-55°C to +125°C
Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds)....................240°C


Description

  Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22A, 4N23A and 4N24A can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANS, JANTX, and JANTXV quality levels.