4N22

Input Type :
Maximum Collector Emitter Voltage :
Maximum Collector Emitter Saturation Voltage :
Isolation Voltage :
Current Transfer Ratio :
Maximum Forward Diode Voltage :
Maximum Collector Current :
Maximum Power Dissipation :
Maximum Operating Temperature :
Minimum Operating Temperature :
Package / Case :
Packaging : Box


Features:

*  Overall current gain...1.5 typical (4N24)
*  Base lead provided for conventional transistor biasing
* Rugged package
*  High gain, high voltage transistor
*  +1kV electrical isolation
 


Application

* Eliminate ground loops
* Level shifting
* Line receiver
*  Switching power supplies
* Motor control


Specifications

Input to Output Voltage............................................................................................. ±1kV
Emitter-Collector Voltage.................................................................................................4V
Collector-Emitter Voltage (V_CEO, I_F = 0).........................................................................35V
Collector-Base Voltage (V_CEO, I_F = 0).............................................................................35V
Reverse Input Voltage .....................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65 Free-Air Temperature (see note 1).......40mA
Peak Forward Input Current (Value applies for tw 1s PRR < 300 pps)........................1A
Continuous Collector Current.......................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C
                       Free-Air Temperature (see Note 2)......300mW
Storage Temperature.................................................................... ...........-65°C to +125°C
Operating Free-Air Temperature Range............................... ....................-55°C to +125°C
Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds)........................240°C  


Description

   Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22, 4N23 and 4N24's can be tested to customer specifications, as well as to MIL-PRF-19500 JAN,JANS, JANTX and JANTXV quality levels.