Features: * Low on-resistance N Channel: RDS(on) 0.5 W, VGS = 10 V, ID = 2.5 A RDS(on) 0.6 W, VGS = 4 V, ID = 2.5 A* 4 V gate drive devices.* High density mountingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 120 V Gate to source voltage VGS...
4AK19: Features: * Low on-resistance N Channel: RDS(on) 0.5 W, VGS = 10 V, ID = 2.5 A RDS(on) 0.6 W, VGS = 4 V, ID = 2.5 A* 4 V gate drive devices.* High density mountingSpecifications Item Symbo...
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Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
120 |
V |
Gate to source voltage |
VGSS |
20 |
V |
Drain current |
ID |
5 |
A |
Drain peak current |
ID(pulse)Note1 |
10 |
A |
Body to drain diode reverse drain current |
IDR |
5 |
A |
Channel dissipation |
Pch(Tc = 25 C)Note2 |
28 |
W |
Channel dissipation |
PchNote2 |
3.5 |
W |
Channel temperature |
Tch |
150 |
C |
Storage temperature |
Tstg |
55 to +150 |
C |