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435MS8GE

Features: ·High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHz·Positive Control: 0/+5V·51 dBm Input IP3·Non-Refl ective Design·MS8G SMT Package, 14.8 mm2ApplicationThe HMC435MS8G / HMC435MS8GE is ideal for:• Basestation Infrastructure• MMDS & 3.5 GHz WLL• CATV/CMTS• Test Instru...

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SeekIC No. : 004230767 Detail

435MS8GE: Features: ·High Isolation: 60 dB @ 1 GHz 50 dB @ 2 GHz·Positive Control: 0/+5V·51 dBm Input IP3·Non-Refl ective Design·MS8G SMT Package, 14.8 mm2ApplicationThe HMC435MS8G / HMC435MS8GE is ideal for:...

435MS8GE Data Sheet

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Part Number:
435MS8GE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

·High Isolation: 60 dB @ 1 GHz
                           50 dB @ 2 GHz
·Positive Control: 0/+5V
·51 dBm Input IP3
·Non-Refl ective Design
·MS8G SMT Package, 14.8 mm2


Application

The HMC435MS8G / HMC435MS8GE is ideal for:
• Basestation Infrastructure
• MMDS & 3.5 GHz WLL
• CATV/CMTS
• Test Instrumentation


Specifications

Control Voltage Range -0.5 to +7.5 Vdc
Storage Temperature -65 to +150
Operating Temperature -40 to +85
RF Input Power Vctl = 0/+5V +31 dBm
ESD Sensitivity (HBM) Class 1A



Description

The 435MS8GE are nonrefl ective DC to 4 GHz GaAs MESFET SPDT switches in low cost 8 lead MSOP8G surface mount packages with exposed ground paddles. The 435MS8GE switch is ideal for cellular/PCS/3G basestation applications yielding 50 to 60 dB isolation, low 0.8 dB insertion loss and +50 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. Onchip circuitry allows positive voltage control of 0/+5 Volts at very low DC currents.




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