40N60SCD1

      The 40N60SCD1 is designed as coolMOS power MOSFET with Series Schottky Diode and ultra fast antiparallel diode which would be in high voltage ISOPLUS i4-PACTM.
      40N60SCD1 has four features.The first one is about its fast CoolMOS power MOSFET- 3rd generation which would have high blocking voltage,low on resistance and low thermal resistance due to reduced chip thickness.The second one is about 40N60SCD1's series schottky diode prevents current flow through MOSFET's body diode which would have very low forward voltage and fast switching.The third one is about its ultra fast HiPerFREDTM anti parallel diode which would have low operating forward voltage and fast and soft reverse recovery and also low switching losses.The fourth one is about 40N60SCD1's ISOPLUS i4-PACTM high voltage package which would have isolated back surface,low coupling capacity between pins and heatsink,enlarged creepage towards heatsink,enlarged creepage between high voltage pins,application friendly pinout,high reliability,industry standard outline and UL registered E 72873.
      There are also some applications about 40N60SCD1.converters with circuit operation leading to current flow through switches in reverse direction(e. g. phaseleg with inductive load and resonant circuits) and also high switching frequency.There some examples about 40N60SCD1.The first one is switched mode power supplies (SMPS).The second one is uninterruptable power supplies (UPS).The third one is DC-DC converters.The fourth one is welding converters.The fifth one is about converters for inductive heating.The last one is drive converters.
      The major ratings of 40N60SCD1 have been concluded into several points as follow.The first one is about its ID25 which would be 38 A with condition of TC = 25°C.The second one is about the VDSS of 40N60SCD1 which would be 600 V with condition of TVJ to be from 25°C to 150°C.The third one is about its RDSon which would be 60 m.The fourth one is about its trr which would be 70 ns.The fifth one is about the VGS of 40N60SCD1 which would be ±20 V.And so on.
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